In particular the high aspect ratio of dot arrays on 110 nm thick resist is confirmed by a standard liftoff process of 20 nm thick gold nanodots at sub15 nm feature size and 40 nm pitch
The smallest gold nanodot size from our A comprehensive model for sub-10 nm electron-beam patterning through the In this study, we propose a set of single-spot experiment to construct a comprehensive model of electron-beam lithography to describe the relation among the incident electrons, resist, and the development conditions such as durations and temperatures. Through the experiments, small feature can be achieved by performing a short-time development due to the high acceleration voltage and large depth of focus of electron-beam system. The singular point in the beginning of the development is also observed in our model and supported by the experimental data. In addition, we verify the characteristic region of each incident spot induced by the point spread function of the electron-beam system. We further fabricate the single line with narrow groove width by utilizing the results from single-spot experiment at low developing temperatures. The line is formed by arranging a series of incident points with a distance close to the characteristic radius.
This method can eliminate the proximity effect effectively and thus the groove width is scaled down to 8 nm. By adopting the successful experience in the single line formation, dense array with narrow linewidth is also demonstrated under well suppression of the proximity effect. The minimum groove width of 9 nm with 30 nm pitch is achieved with 5 s development time at -10 °C. Finally, the exceptional capability of pattern transfer is presented due to the high aspect ratio of the resist.Excited-State Aromaticity Reversals in Naphthalene and Anthracene.Aromaticity reversals between the electronic ground (S0) and low-lying singlet (S1, S2) and triplet (T1, T2, T3) states of naphthalene and anthracene are investigated by calculating the respective off-nucleus isotropic magnetic shielding distributions using complete-active-space self-consistent field (CASSCF) wavefunctions involving gauge-including atomic orbitals (GIAOs). The shielding distributions around the aromatic S0, antiaromatic S1 (1Lb), and aromatic S2 (1La) states in naphthalene are found to resemble the outcomes of fusing together the respective S0, S1, and S2 shielding distributions of two benzene rings.
In anthracene, 1La is lower in energy than 1Lb, and as a result, the S1 state becomes aromatic, and the S2 state becomes antiaromatic; the corresponding shielding distributions are found to resemble extensions by one ring of those around the S2 and S1 states in naphthalene. The lowest antiaromatic singlet state of either molecule is found to be significantly more antiaromatic than the respective T1 state, which shows that it would be incorrect to assume that the similarity between the (anti)aromaticities of the S1 and T1 states in benzene, cyclobutadiene, and cyclooctatetraene would be maintained in polycyclic aromatic hydrocarbons.Nanofabrication of plasmonic structures on insulating substrates by Ottawa, K1N6N5, Canada. Center for Research in Photonics, University of Ottawa, In last few decades, micro- and nano-fabrication techniques based on photolithography and electron beam lithography have advanced greatly, mainly in the field of semiconductor fabrication. 6-butyl-n-hydroxynaphthimide trifluoromethanesulfonic acid in Electrophilic Aromatic Substitution are generally transferrable to the fabrication of plasmonic structures and metamaterials. However, plasmonic devices often require a transparent insulating substrate to be operational at visible or near-infrared wavelengths. Here we report a resist-on-metal bilayer lift-off technique enabling the fabrication of plasmonic structures on insulating substrates.
The metal layer under the resist eliminates major difficulties in lithography, such as charging during electron beam exposure and uncontrolled diffuse optical scattering during photolithography. In addition, the resist-on-metal bilayer can be migrated to different substrates with minimal process alteration, because the material properties of the substrate, such as secondary electron emission or optical reflectance, become irrelevant due to the shielding provided by the metal layer. As demonstrations, we fabricate large-scale plasmonic waveguides and Bragg gratings, adiabatically-modulated plasmonic waveguide couplers, and plasmonic nanoantenna arrays using the resist-on-metal bilayer lift-off process. The process can also be used to define structures formed of other materials such as dielectrics.Ultrasmall Designed Plasmon Resonators by Fused Colloidal Nanopatterning.Technology, and Research) , 2 Fusionopolis Way , 138634 , Singapore.Singapore , 9 Engineering Drive 1 , 117575 Singapore.
This work presents a procedure for large-area patterning of designed plasmon resonators that are much smaller than possible with conventional lithography techniques. Fused Colloidal Nanopatterning combines directed self-assembly and controlled fusing of spherical colloidal nanoparticles. The two-step approach first patterns a surface covered with hydrogen silsesquioxane, an electron beam resist, forming traps into which the colloidal gold nanoparticles self-assemble.